Kinetic Model of SiGe Selective Epitaxial Growth using RPCVD Technique
نویسندگان
چکیده
منابع مشابه
Vertical SiGe Epitaxial Growth System
OVERVIEW: The increasing sophistication of home electronics and telecommunication devices is propelling the demand for improved semiconductor devices. The SiGe (silicon germanium)-HBT (hetero-junction bipolar transistor) can realize high-speed operation, low noise, and low power consumption, therefore, its expected application to radio frequency IC communication devices is predicted to grow rap...
متن کاملAnisotropic Step Stiffness from a Kinetic Model of Epitaxial Growth
Starting from a detailed model for the kinetics of a step edge or island boundary, we derive a Gibbs-Thomson type formula and the associated step stiffness as a function of the step edge orientation angle, θ. Basic ingredients of the model are: (i) the diffusion of point defects (“adatoms”) on terraces and along step edges; (ii) the convection of kinks along step edges; and (iii) constitutive l...
متن کاملKinetic model for a step edge in epitaxial growth.
A kinetic theory is formulated for the velocity of a step edge in epitaxial growth. The formulation involves kinetic, mean-field equations for the density of kinks and "edge adatoms" along the step edge. Equilibrium and kinetic steady states, corresponding to zero and nonzero deposition flux, respectively, are derived for a periodic sequence of step edges. The theoretical results are compared t...
متن کاملInfluence of kinetic roughening on the epitaxial growth of silicon
-The low temperature homoepitaxial growth of silicon has been probed iii situ by Reflection High Energy Electron Diffraction jRHEED) in a Molecular Beam Epitaxy jMBE)
متن کاملGeometric control of kinetic pathways: Characterizing equilibrium in epitaxial growth
Paul N. Patrone1,2,∗ Russel E. Caflisch3,† and Dionisios Margetis4‡ Department of Physics, and Institute for Research in Electronics and Applied Physics, University of Maryland, College Park, Maryland 20742, USA Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA Department of Mathematics, and Institute for Pure and Appl...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of The Electrochemical Society
سال: 2011
ISSN: 0013-4651
DOI: 10.1149/1.3548113